- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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60
In-stock
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Toshiba | MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V to 4.5 V | 115 nC | Enhancement | |||||
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8
In-stock
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Toshiba | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 82 mOhms | 3 V to 4.5 V | 105 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V to 4.5 V | 40 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V to 4.5 V | 40 nC | Enhancement | |||||
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13
In-stock
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Toshiba | MOSFET MOSFET NChtrr100ns 0.25ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 150 mOhms | 3 V to 4.5 V | 55 nC | Enhancement |