MOSFET - Kaimeite

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3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	TK10P60W,RVQ	1+ $2.760 10+ $2.220 100+ $1.780 250+ $1.690 2000+ $1.190		PDF RFQ	1,201 In-stock	Toshiba	MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC	30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	9.7 A	380 mOhms	2.7 V to 3.7 V	20 nC	Enhancement
	TK10A60W,S4VX	1+ $2.800 10+ $2.250 100+ $2.050 250+ $1.850		PDF RFQ	60 In-stock	Toshiba	MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC	30 V	Through Hole	TO-220FP-3			Reel	1 Channel	Si	N-Channel	600 V	9.7 A	327 mOhms	2.7 V to 3.7 V	20 nC	Enhancement
	TK10E60W,S1VX	1+ $2.800 10+ $2.250 100+ $2.050 250+ $1.850		PDF RFQ	97 In-stock	Toshiba	MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	9.7 A	380 mOhms	2.7 V to 3.7 V	20 nC	Enhancement

TK10P60W,RVQ

TK10P60W,RVQ

Toshiba

MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC

Stock : 1,201

1+: $2.760

10+: $2.220

100+: $1.780

250+: $1.690

2000+: $1.190

TK10A60W,S4VX

TK10A60W,S4VX

Toshiba

MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC

Stock : 60

1+: $2.800

10+: $2.250

100+: $2.050

250+: $1.850

TK10E60W,S1VX

TK10E60W,S1VX

Toshiba

MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC

Stock : 97

1+: $2.800

10+: $2.250

100+: $2.050

250+: $1.850

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