- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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210
In-stock
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Toshiba | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | DTMOSIV | |||||
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GET PRICE |
20,000
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 62 mOhms | 3 V | 135 nC | Enhancement | |||
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102
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 150 mOhms | 3 V | 55 nC | Enhancement | ||||
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69
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 105 mOhms | 2.5 V | 40 nC | Enhancement | ||||
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52
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Toshiba | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.5 V | 85 nC | Enhancement | ||||
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79
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | ||||
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20,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | DTMOSIV | |||||
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6,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | DTMOSIV | ||||
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60
In-stock
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Toshiba | MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V to 4.5 V | 115 nC | Enhancement | |||||
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5
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 3.5 V | 135 nC | Enhancement | ||||
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8
In-stock
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Toshiba | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 82 mOhms | 3 V to 4.5 V | 105 nC | Enhancement | ||||
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5
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||||
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24
In-stock
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Toshiba | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||
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38
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 068ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 68 mOhms | 2.5 V to 3.5 V | 100 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V | 40 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET N-Ch Power MOSFET Transistor | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49.2 A | 55 mOhms | 2.5 V | 160 nC | Enhancement |
