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Packaging :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK6Q65W,S1Q
1+
$1.280
10+
$1.020
100+
$0.788
500+
$0.697
RFQ
179
In-stock
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-251-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 5.8 A 890 mOhms 2.5 V 11 nC Enhancement
TK6A65W,S5X
1+
$1.740
10+
$1.390
100+
$1.070
500+
$0.948
VIEW
RFQ
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 5.8 A 850 mOhms 2.5 V 11 nC Enhancement
TK6P65W,RQ
2000+
$0.486
4000+
$0.477
10000+
$0.468
24000+
$0.440
VIEW
RFQ
Toshiba MOSFET Power MOSFET N-Channel 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 5.8 A 890 mOhms 2.5 V 11 nC Enhancement
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