- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,680
In-stock
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC | 10 V | Through Hole | TO-3PN-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 65 mOhms | 135 nC | ||||||||
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23,187
In-stock
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Toshiba | MOSFET Small-signal FET 0.5A 20V 46pF 1.52 | 10 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 460 mOhms | 350 mV | 1.23 nC | Enhancement | |||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | |||||||||
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6,176
In-stock
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Toshiba | MOSFET UFM S-MOS Pd: 0.8W F: 1MHz | 10 V | SMD/SMT | UFM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1 mA | 28 mOhms | 13.6 nC | ||||||||
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108
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 207 A | 3.4 mOhms | 140 nC | ||||||||
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7,276
In-stock
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Toshiba | MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 5.6 Ohms | |||||||||
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8,397
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 5.6 Ohms | 350 mV | Enhancement | |||||
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435
In-stock
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Toshiba | MOSFET N-Ch PWR FET 75A 103W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 9.5 mOhms | |||||||||
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10,647
In-stock
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Toshiba | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | |||||||||
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2,900
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 66 mOhms | 350 mV | 16.8 nC | Enhancement | ||||
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631
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3C-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 250 mA | 9 Ohms | 350 mV | 340 pC | Enhancement | ||||
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1,980
In-stock
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Toshiba | MOSFET Small-signal MOSFET High Speed Switching | 10 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 mA | 1.5 Ohms | 600 mV | Enhancement | ||||||
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194
In-stock
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Toshiba | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 52 A | 13.8 mOhms | |||||||||
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2,787
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 10 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 1.52 Ohms | 350 mV | 1.23 nC | Enhancement | |||||
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104
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1 mA | 1.9 mOhms | |||||||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 9.7 mOhms | |||||||||
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VIEW | Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 118 mOhms | 350 mV | 10.8 nC | Enhancement | ||||
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4,022
In-stock
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Toshiba | MOSFET Singel N-ch 20V 0.18A | 10 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 180 mA | 3 Ohms | Enhancement | ||||||
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44
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 80A 103W 37nC | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 8.4 mOhms | 37 nC | ||||||||
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VIEW | Toshiba | MOSFET UMOSVIII 60V 3.3m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.2 mOhms | |||||||||
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VIEW | Toshiba | MOSFET Vds=20V Id=3.2A 3Pin | 10 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 75 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement |