- Package / Case :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,000
In-stock
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Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | |||||
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | |||||
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4,984
In-stock
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Toshiba | MOSFET N-Ch 60V 1440pF 27nC 79A 81W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 5.4 mOhms | 1.5 V | 22 nC | Enhancement | |||||
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4,918
In-stock
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Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | ||||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | |||||
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333
In-stock
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Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | |||||
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14,788
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | ||||
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8,688
In-stock
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Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement | ||||
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2,392
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 150 A | 850 uOhms | 1.4 V | 103 nC | Enhancement | |||||
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4,096
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 45 V | 150 A | 1.7 mOhms | 1.4 V | 99 nC | Enhancement | ||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement | ||||
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2,089
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | ||||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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690
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1.4 V | 41 nC | Enhancement | ||||
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5,999
In-stock
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Toshiba | MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 5.5 mOhms | 4 V | 49 nC | Enhancement | ||||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | ||||
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9,600
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | ||||
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1,497
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 3.5A 3.2nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 92 mOhms | 1.5 V | 3.2 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET UMOSVIII 40V 17.8m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 13.7 mOhms | 2.5 V | 10 nC | Enhancement |