- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,470
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 280 mOhm | - 10 V to + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 280 mOhms | 2.8 V | 5.6 nC | Enhancement | Z-FET | ||
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197
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement |
