- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,000
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 35 A | 90 mOhms | 1.8 V | 30 nC | Enhancement | |||
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1,348
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | |||
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376
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | |||
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1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | |||
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1,461
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | |||
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3,870
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 5.3 A | 1 Ohm | 3.1 V | 13 nC | Enhancement | ||||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | |||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement |
