- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,798
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1000 V | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
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554
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | ||||
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408
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V 75 mOhm | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 30 A | 75 mOhms | 1.7 V | 51 nC | Enhancement | ||||
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2,470
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 280 mOhm | - 10 V to + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 280 mOhms | 2.8 V | 5.6 nC | Enhancement | Z-FET | |||
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8,070
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 90 A | 25 mOhms | 2.4 V | 406 nC | Enhancement | ||||
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5,600
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1200V, 60A | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 60 A | 40 mOhms | 2.8 V | 283 nC | Enhancement | ||||
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6,264
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 36 A | 90 mOhms | 1.8 V | 30.4 nC | Enhancement | ||||
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1,000
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 35 A | 90 mOhms | 1.8 V | 30 nC | Enhancement | ||||
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1,348
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
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376
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
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481
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 23 A | 120 mOhms | 2.1 V | 17.3 nC | Enhancement | |||||
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1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||||
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1,461
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||||
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197
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement | |||||
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3,870
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 5.3 A | 1 Ohm | 3.1 V | 13 nC | Enhancement | |||||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | ||||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
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39
In-stock
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Wolfspeed / Cree | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | 25 V | Through Hole | TO-247-3 | - 55 C | + 135 C | 1 Channel | SiC | N-Channel | 1200 V | 33 A | 80 mOhms | 2.5 V | 90.8 nC | Enhancement |
