- Vgs - Gate-Source Voltage :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,000
In-stock
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Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 0.2 Ohms, 0.2 Ohms | 0.45 V, 0.45 V | 1.25 nC, 1.25 nC | Enhancement | ||||
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4,781
In-stock
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Vishay Semiconductors | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 0.045 Ohms | 0.6 V | 5.2 nC | Enhancement | TrenchFET | |||
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1,036
In-stock
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Vishay Semiconductors | MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.7 A | 0.085 Ohms | 1.5 V | 5.5 nC | Enhancement | TrenchFET | |||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | 12 V, 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 800 mA, 800 mA | 200 mOhms, 200 mOhms | 450 mV, 450 mV | 1.15 nC, 1.15 nC | Enhancement |
