- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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15,000
In-stock
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IR / Infineon | MOSFET 40V 195A 1.4mOhm HEXFET 366W 300nC | 20 V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 404 A | 1.3 mOhms | 460 nC | StrongIRFET | ||||
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269
In-stock
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IR / Infineon | MOSFET MOSFT 40V 327A 1.7mOhm 108nC TO221 | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 327 A | 2 mOhms | 108 nC |
