- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,181
In-stock
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IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | ||||
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5,791
In-stock
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IR / Infineon | MOSFET MOSFT 40V 18A 5mOhm 33nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | |||||||
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2,258
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | |||
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1,328
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | Enhancement | ||||
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1,607
In-stock
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IR / Infineon | MOSFET Automotive MOSFET N 40V, 14A, 10mOhm | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 14 A | 10 mOhms |
