- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,258
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 11.1 mOhms | 4 V | 29 nC | ||||
|
|
1,960
In-stock
|
IR / Infineon | MOSFET 55V SINGLE N-CH 13.6mOhms 31nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.6 mOhms | 4 V | 31 nC | Enhancement | |||
|
|
4,000
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 6mOhms 7nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 51 A | 6 mOhms | 7 nC | |||||||
|
|
670
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement |
