- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,825
In-stock
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IR / Infineon | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | |||||||||
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2,987
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | |||||||
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3,973
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | |||||||
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2,000
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | ||||
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555
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | ||||
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556
In-stock
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IR / Infineon | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 4 V | 180 nC | ||||||||
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500
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 3.7 mOhms | 2 V | 230 nC | Enhancement | |||||
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800
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 150 A | 3.7 mOhms | 2 V | 230 nC | Enhancement | |||||
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80
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | Enhancement |