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22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
7,310
In-stock
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IR / Infineon | MOSFET MOSFT 150V 171 5.9mOhm 151nC Qg | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 151 nC | ||||||
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | |||
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | |||
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1,152
In-stock
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IR / Infineon | MOSFET MOSFT 250V 19A 46mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 19 A | 46 mOhms | 73 nC | Enhancement | ||||
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2,555
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | |||
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5,290
In-stock
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IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | ||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | |||
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238
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 3 V | 227 nC | Enhancement | |||
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157
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | |||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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219
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 3 V to 5.5 V | 19 nC | Enhancement | |||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | |||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | |||||||
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2,103
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | ||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement | |||
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524
In-stock
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IR / Infineon | MOSFET MOSFT 150V 83A 15mOhm 71nC | 30 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||
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343
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 57 nC | Enhancement | ||||
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131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | ||||
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63
In-stock
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IR / Infineon | MOSFET MOSFT 150V 83A 15mOhm 71nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||
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3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement | ||||
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59
In-stock
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IR / Infineon | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||
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49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |
