- Package / Case :
- Rds On - Drain-Source Resistance :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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1,824
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 200V 9.4A 380mOhm 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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815
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 150V 86A D2PAK | 30 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 86 A | 11.7 mOhms | 3 V | 71 nC | Enhancement | ||||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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1,006
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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169
In-stock
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IR / Infineon | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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250
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 44 A | 32 mOhms | 60 nC | Enhancement | |||||
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800
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 15 mOhms | 5 V | 71 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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3,890
In-stock
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IR / Infineon | MOSFET 250V N-CH HEXFET 38mOhms 110nC | 30 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 35 A | 32 mOhms | 110 nC | Enhancement | Directfet |