- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 105 mOhms (2)
- 110 mOhms (2)
- 13.5 mOhms (1)
- 15 mOhms (1)
- 17 mOhms (1)
- 17.5 mOhms (1)
- 175 mOhms (1)
- 18 mOhms (2)
- 20 mOhms (3)
- 205 mOhms (3)
- 22 mOhms (2)
- 240 mOhms (1)
- 25 mOhms (1)
- 25.6 mOhms (1)
- 250 mOhms (1)
- 26 mOhms (1)
- 270 mOhms (1)
- 35 mOhms (1)
- 40 mOhms (1)
- 45 mOhms (1)
- 55 mOhms (1)
- 58 mOhms (1)
- 62 mOhms (1)
- 7 mOhms (1)
- 76 mOhms (1)
- 90 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,000
In-stock
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IR / Infineon | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | ||||
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17,026
In-stock
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IR / Infineon | MOSFET P-CHANNEL -20V -6.9A 32mOhm -2.5V capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.9 A | 55 mOhms | |||||||
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5,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | - 0.7 V | 50 nC | ||||
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4,120
In-stock
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IR / Infineon | MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | 26 nC | Enhancement | ||||
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2,248
In-stock
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IR / Infineon | MOSFET 1 P-CH -40V HEXFET 15mOhms 73nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | - 3 V | 73 nC | Enhancement | |||
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | ||||
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4,935
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | - 1 V | 42 nC | ||||
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5,197
In-stock
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IR / Infineon | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | - 0.9 V | 91 nC | ||||||
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5,908
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.2 A | 25.6 mOhms | - 1.8 V | 14 nC | Enhancement | |||
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GET PRICE |
50,140
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -12V 9.2A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | - 0.9 V | 57 nC | |||||
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4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | |||
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2,519
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | Enhancement | ||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | |||
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1,944
In-stock
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IR / Infineon | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | 42 nC | Enhancement | ||||
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3,240
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -7A 26mOhm 46nC Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7 A | 26 mOhms | 46 nC | Enhancement | ||||
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4,526
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 1.7A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | 5.4 nC | Enhancement | ||||
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1,713
In-stock
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IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.1 A | 205 mOhms | Enhancement | |||||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||
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588
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -3.6A 90mOhm 20nC Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.6 A | 90 mOhms | 20 nC | Enhancement | ||||
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255
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 17.5mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | Enhancement | ||||
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2,930
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 4.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 76 mOhms | - 1 V | 23 nC | Enhancement | |||
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4,000
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | - 3 V | 26 nC | ||||
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3,000
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement | ||||
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3,266
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -10A 20mOhm 61nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 20 mOhms | - 2.04 V | 92 nC | ||||||
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2,367
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 20 mOhms | 40 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 45 mOhms | - 1 V | 59 nC | ||||||
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1,779
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V A mOhm 59nC | SMD/SMT | TSSOP-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.6 A | 15 mOhms | - 1.2 V | 89 nC | ||||||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC | ||||||
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829
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | 6.9 nC | Enhancement | ||||
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1,830
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | Enhancement |
