- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,240
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -7A 26mOhm 46nC Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7 A | 26 mOhms | 46 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | Enhancement |
