- Package / Case :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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540
In-stock
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IR / Infineon | MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 2 mOhms | 4 V | 240 nC | ||||||||
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663
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 240 A | 2 mOhms | 3.7 V | 285 nC | StrongIRFET | |||||
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89
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 4 V | 200 nC | ||||||
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800
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 4 V | 160 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 60V 293A 2.1 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 2 mOhms | 200 nC |