- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,293
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | |||
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3,000
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 14 mOhms | 24 nC | Enhancement | ||||
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670
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement | |||
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209
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 61 A | 14 mOhms | 0.6 V to 2 V | 24 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | ||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | ||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC |
