- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
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25
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
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1,784
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
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3
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 71 A | 13 mOhms | 62 nC | Enhancement |