- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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734
In-stock
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IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | |||
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440
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | ||||
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800
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
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200
In-stock
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IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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280
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
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482
In-stock
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IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
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275
In-stock
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IR / Infineon | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | ||||||||
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174
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
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590
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | ||||
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219
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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91
In-stock
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IR / Infineon | MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | |||||||||
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100
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
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25
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
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3,200
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
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267
In-stock
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IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 3 V | 216 nC | Enhancement | StrongIRFET | |||
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270
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.2 mOhms 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | |||
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131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement | |||||
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290
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 5.6 mOhms | 2.1 V | 85 nC | Enhancement | StrongIRFET | |||
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395
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.3mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.6 mOhms | 2.2 V to 3.9 V | 216 nC | Enhancement | CoolIRFet | |||
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49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 4 V | 170 nC |
