- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 13 A (1)
- - 14 A (1)
- - 19 A (1)
- - 20 A (1)
- - 31 A (1)
- 103 A (1)
- 124 A (2)
- 129 A (1)
- 130 A (2)
- 14 A (2)
- 14.4 A (1)
- 140 A (2)
- 15 A (1)
- 150 A (2)
- 162 A (1)
- 17 A (6)
- 18 A (2)
- 192 A (1)
- 197 A (1)
- 21 A (1)
- 22 A (1)
- 235 A (1)
- 24 A (2)
- 25 A (1)
- 250 A (1)
- 260 A (1)
- 27 A (1)
- 280 A (1)
- 29 A (1)
- 295 A (1)
- 3 A (1)
- 3.1 A (13)
- 320 A (1)
- 33 A (2)
- 35 A (2)
- 36 A (2)
- 375 A (1)
- 380 A (1)
- 400 A (2)
- 42 A (1)
- 429 A (1)
- 43 A (4)
- 44 A (17)
- 48 A (1)
- 49 A (1)
- 5 A (2)
- 5.1 A, 5.1 A (1)
- 545 A (1)
- 55 A (1)
- 56 A (1)
- 564 A (1)
- 58 A (1)
- 59 A (2)
- 60 A (1)
- 61 A (2)
- 62 A (1)
- 64 A (1)
- 67 A (1)
- 70 A (1)
- 75 A (2)
- 77 A (1)
- 82 A (1)
- 84 A (3)
- 85 A (1)
- 86 A (1)
- 87 A (1)
- 9.4 A (2)
- 9.5 A (1)
- 93 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
- 1.1 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (2)
- 1.6 mOhms (1)
- 1.8 mOhms (1)
- 10 mOhms (1)
- 10.5 mOhms (1)
- 100 mOhms (1)
- 105 mOhms (1)
- 11 mOhms (2)
- 11.7 mOhms (1)
- 110 mOhms (1)
- 12 mOhms (1)
- 125 mOhms (1)
- 13 mOhms (1)
- 13.9 mOhms (1)
- 14 mOhms (1)
- 14.5 mOhms (1)
- 15 mOhms (2)
- 15.8 mOhms (3)
- 150 mOhms (2)
- 155 mOhms (1)
- 16 mOhms (3)
- 165 mOhms (1)
- 17.5 mOhms (1)
- 170 mOhms (1)
- 18 mOhms (3)
- 190 mOhms (1)
- 2 mOhms (1)
- 2.4 mOhms (2)
- 2.5 mOhms (1)
- 2.8 mOhms (1)
- 200 mOhms (2)
- 22 mOhms (1)
- 23 mOhms (1)
- 235 mOhms (1)
- 24.5 mOhms (2)
- 26 mOhms (3)
- 26.5 mOhms (2)
- 28.5 mOhms (1)
- 3 mOhms (1)
- 3.05 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 3.8 mOhms (1)
- 300 mOhms (1)
- 32 mOhms (3)
- 350 mOhms (1)
- 36 mOhms (1)
- 380 mOhms (2)
- 4 mOhms (1)
- 4.2 mOhms (1)
- 4.5 mOhms (1)
- 4.6 mOhms (1)
- 40 mOhms (2)
- 42 mOhms (2)
- 43 mOhms (1)
- 45 mOhms (5)
- 5.2 mOhms (1)
- 5.3 mOhms (1)
- 5.7 mOhms (1)
- 5.9 mOhms (1)
- 51 mOhms (1)
- 54 mOhms (1)
- 580 mOhms (1)
- 6.5 mOhms (1)
- 60 mOhms (1)
- 600 mOhms (2)
- 65 mOhms (1)
- 65 mOhms, 65 mOhms (1)
- 7 mOhms (1)
- 7.2 mOhms (1)
- 7.5 mOhms (1)
- 75 mOhms (1)
- 77.5 mOhms (1)
- 8 mOhms (3)
- 8.4 mOhms (1)
- 8.5 mOhms (4)
- 800 Ohms (1)
- 9 mOhms (5)
- 9.3 mOhms (1)
- 9.5 mOhms (2)
- 90 mOhms (1)
- 900 Ohms (2)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (3)
- 100 nC (1)
- 110 nC (1)
- 120 nC (1)
- 13.3 nC (1)
- 130 nC (1)
- 14 nC (1)
- 15 nC (2)
- 150 nC (1)
- 160 nC (5)
- 170 nC (2)
- 18 nC (3)
- 180 nC (3)
- 20 nC (1)
- 200 nC (2)
- 22 nC (5)
- 22.7 nC (2)
- 220 nC (1)
- 225 nC (2)
- 23.3 nC (2)
- 230 nC (1)
- 24 nC (2)
- 24.7 nC (1)
- 25 nC (2)
- 26 nC (2)
- 27 nC (2)
- 275 nC (1)
- 28 nC (1)
- 29 nC (1)
- 29 nC, 29 nC (1)
- 30 nC (1)
- 31 nC (1)
- 32 nC (1)
- 34 nC (3)
- 38 nC (1)
- 39 nC (1)
- 40 nC (4)
- 42 nC (3)
- 44 nC (2)
- 44.7 nC (1)
- 51 nC (1)
- 54 nC (1)
- 562 nC (1)
- 58 nC (2)
- 60 nC (3)
- 69 nC (1)
- 7.3 nC (1)
- 71 nC (2)
- 74 nC (1)
- 75 nC (1)
- 8.3 nC (1)
- 80 nC (1)
- 84 nC (1)
- 9.6 nC (1)
- 93.3 nC (2)
- 97 nC (1)
- Tradename :
123 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,873
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
|
|
5,263
In-stock
|
IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
|
3,950
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 40 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 545 A | 350 mOhms | 2.2 V | 562 nC | Enhancement | ||||
|
|
4,989
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
|
|
2,382
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||||
|
|
3,738
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | ||||
|
|
3,987
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5.1 A, 5.1 A | 65 mOhms, 65 mOhms | 1 V, 1 V | 29 nC, 29 nC | Enhancement | ||||
|
|
20,000
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
5,816
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
|
|
5,332
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
|
|
2,635
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement | ||||
|
|
5,686
In-stock
|
IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
7,178
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | ||||
|
|
4,700
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
|
|
3,258
In-stock
|
IR / Infineon | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 36mOhms | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 36 mOhms | 7.3 nC | Enhancement | |||||
|
|
3,823
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | |||||
|
|
3,580
In-stock
|
IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
|
|
3,293
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | ||||
|
|
2,778
In-stock
|
IR / Infineon | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
|
|
1,767
In-stock
|
IR / Infineon | MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.4 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
|
|
1,631
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 380A 1.4mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1 MOhms | 120 nC | Enhancement | |||||
|
|
2,409
In-stock
|
IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | ||||
|
|
GET PRICE |
8,625
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
4,604
In-stock
|
IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 43 A | 10 mOhms | 3.9 V | 22 nC | Enhancement | ||||
|
|
2,566
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | |||
|
|
2,402
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
3,560
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | ||||
|
|
346
In-stock
|
IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
|
|
1,962
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 1.35 V to 2.35 V | 9.6 nC | Enhancement | ||||
|
|
759
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET |
