- Mounting Style :
- Minimum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 12 A (1)
- - 13 A (2)
- - 14 A (3)
- - 19 A (1)
- - 20 A (2)
- - 27 A (1)
- - 31 A (2)
- 100 A (3)
- 103 A (1)
- 104 A (1)
- 105 A (2)
- 110 A (3)
- 116 A (1)
- 120 A (4)
- 122 A (1)
- 123 A (2)
- 124 A (2)
- 127 A (1)
- 128 A (1)
- 129 A (2)
- 130 A (1)
- 131 A (1)
- 14 A (1)
- 14.4 A (2)
- 140 A (3)
- 150 A (5)
- 160 A (4)
- 162 A (3)
- 17 A (4)
- 170 A (1)
- 18 A (1)
- 180 A (4)
- 183 A (1)
- 19 A (1)
- 190 A (1)
- 192 A (2)
- 195 A (11)
- 197 A (1)
- 200 A (1)
- 21 A (2)
- 210 A (1)
- 235 A (1)
- 24 A (4)
- 240 A (2)
- 246 A (1)
- 254 A (2)
- 260 A (1)
- 27 A (1)
- 270 A (2)
- 280 A (1)
- 29 A (1)
- 3 A (1)
- 3.1 A (10)
- 31 A (1)
- 317 A (1)
- 320 A (3)
- 33 A (3)
- 340 A (2)
- 35 A (1)
- 36 A (2)
- 37 A (2)
- 375 A (1)
- 380 A (1)
- 400 A (2)
- 42 A (1)
- 426 A (1)
- 429 A (1)
- 43 A (4)
- 44 A (14)
- 45 A (2)
- 48 A (2)
- 49 A (2)
- 5 A (2)
- 51 A (2)
- 522 A (2)
- 523 A (1)
- 53 A (1)
- 56 A (1)
- 564 A (1)
- 57 A (2)
- 58 A (2)
- 59 A (5)
- 60 A (1)
- 62 A (2)
- 63 A (1)
- 67 A (1)
- 7 A (1)
- 70 A (1)
- 71 A (3)
- 72 A (1)
- 73 A (1)
- 75 A (3)
- 76 A (3)
- 77 A (1)
- 80 A (2)
- 82 A (1)
- 84 A (4)
- 85 A (3)
- 86 A (1)
- 87 A (1)
- 88 A (1)
- 89 A (1)
- 9.5 A (2)
- 91 A (1)
- 93 A (2)
- 99 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
- 1.1 mOhms (1)
- 1.2 mOhms (4)
- 1.25 mOhms (1)
- 1.4 mOhms (2)
- 1.5 mOhms (2)
- 1.6 mOhms (5)
- 1.8 mOhms (5)
- 10 mOhms (2)
- 10.3 mOhms (1)
- 10.5 mOhms (1)
- 100 mOhms (1)
- 11 mOhms (2)
- 11.1 mOhms (2)
- 11.9 mOhms (1)
- 12 mOhms (2)
- 12.1 mOhms (1)
- 12.6 mOhms (1)
- 12.9 mOhms (1)
- 13 mOhms (2)
- 13.6 mOhms (1)
- 13.9 mOhms (1)
- 14 mOhms (1)
- 14.5 mOhms (3)
- 145 mOhms (1)
- 15 mOhms (1)
- 15.8 mOhms (3)
- 150 mOhms (4)
- 16 mOhms (3)
- 17.5 mOhms (3)
- 170 mOhms (3)
- 175 mOhms (1)
- 18 mOhms (4)
- 190 mOhms (1)
- 2 mOhms (3)
- 2.3 mOhms (2)
- 2.4 mOhms (6)
- 2.5 mOhms (2)
- 2.6 mOhms (3)
- 2.7 mOhms (1)
- 2.8 mOhms (1)
- 200 mOhms (3)
- 22 mOhms (4)
- 23 mOhms (2)
- 24.5 mOhms (2)
- 26 mOhms (2)
- 26.5 mOhms (3)
- 27 mOhms (1)
- 28.5 mOhms (1)
- 290 mOhms (1)
- 3 mOhms (2)
- 3.05 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhms (4)
- 3.5 mOhms (4)
- 3.7 mOhms (3)
- 3.8 mOhms (1)
- 3.9 mOhms (2)
- 300 mOhms (2)
- 34 mOhms (1)
- 36 mOhms (1)
- 4 mOhms (5)
- 4.2 mOhms (3)
- 4.25 mOhms (1)
- 4.5 mOhms (3)
- 4.6 mOhms (1)
- 4.7 mOhms (1)
- 4.8 mOhms (3)
- 4.9 mOhms (1)
- 40 mOhms (1)
- 42 mOhms (3)
- 45 mOhms (3)
- 5 mOhms (1)
- 5.3 mOhms (3)
- 5.6 mOhms (1)
- 5.7 mOhms (1)
- 5.9 mOhms (3)
- 51 mOhms (2)
- 580 mOhms (1)
- 6.5 mOhms (2)
- 6.6 mOhms (1)
- 6.7 mOhms (2)
- 60 mOhms (1)
- 600 mOhms (2)
- 65 mOhms (1)
- 690 mOhms (1)
- 7 mOhms (5)
- 7.2 mOhms (1)
- 7.3 mOhms (1)
- 7.5 mOhms (2)
- 700 uOhms (1)
- 75 mOhms (1)
- 750 Ohms (1)
- 750 uOhms (1)
- 77.5 mOhms (2)
- 78 mOhms (1)
- 8 mOhms (2)
- 8.2 mOhms (1)
- 8.4 mOhms (5)
- 8.5 mOhms (4)
- 800 Ohms (1)
- 82 mOhms (1)
- 9 mOhms (4)
- 9.3 mOhms (2)
- 9.4 mOhms (1)
- 9.5 mOhms (2)
- 9.6 mOhms (1)
- 90 mOhms (1)
- 900 Ohms (2)
- 970 mOhms (1)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (2)
- 100 nC (1)
- 107 nC (2)
- 110 nC (2)
- 12.7 nC (1)
- 120 nC (7)
- 130 nC (3)
- 14 nC (1)
- 140 nC (1)
- 143 nC (3)
- 15 nC (2)
- 150 nC (8)
- 160 nC (10)
- 17 nC (1)
- 170 nC (7)
- 18 nC (1)
- 180 nC (7)
- 188 nC (1)
- 20 nC (1)
- 200 nC (4)
- 21 nC (1)
- 210 nC (2)
- 216 nC (3)
- 22 nC (4)
- 22.7 nC (2)
- 220 nC (2)
- 23.3 nC (3)
- 230 nC (2)
- 24.7 nC (1)
- 25 nC (3)
- 26 nC (3)
- 260 nC (1)
- 271 nC (2)
- 275 nC (1)
- 285 nC (1)
- 29 nC (4)
- 30 nC (1)
- 300 nC (3)
- 305 nC (3)
- 31 nC (4)
- 324 nC (1)
- 34 nC (4)
- 37 nC (1)
- 38 nC (2)
- 38.7 nC (1)
- 39 nC (1)
- 40 nC (4)
- 42 nC (6)
- 43 nC (1)
- 44 nC (4)
- 44.7 nC (1)
- 460 nC (1)
- 50 nC (1)
- 51 nC (1)
- 54 nC (3)
- 56 nC (1)
- 57 nC (1)
- 58 nC (3)
- 6.8 nC (1)
- 62 nC (4)
- 63 nC (2)
- 65 nC (2)
- 66 nC (1)
- 69 nC (1)
- 7.3 nC (1)
- 71 nC (1)
- 73 nC (3)
- 74 nC (1)
- 75 nC (2)
- 76 nC (1)
- 77 nC (2)
- 8.3 nC (2)
- 8.8 nC (1)
- 80 nC (1)
- 81 nC (1)
- 82 nC (1)
- 84 nC (1)
- 85 nC (4)
- 86 nC (1)
- 87 nC (1)
- 89 nC (1)
- 9.6 nC (1)
- 90 nC (3)
- 91 nC (2)
- 93.3 nC (1)
- 95 nC (1)
- 97 nC (1)
- Tradename :
219 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,873
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
|
|
5,263
In-stock
|
IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
|
2,458
In-stock
|
IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
|
|
GET PRICE |
4,485
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
|
|
3,400
In-stock
|
IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
2,375
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||
|
|
897
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 uOhms | 3 V | 305 nC | Enhancement | CoolIRFet | |||
|
|
GET PRICE |
14,250
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
2,382
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||||
|
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
4,074
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
|
|
2,684
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
|
|
20,000
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
5,816
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
|
|
2,635
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement | ||||
|
|
5,686
In-stock
|
IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
1,040
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 4 V | 160 nC | |||||
|
|
3,130
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
|
|
7,178
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | ||||
|
|
4,700
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
|
|
2,615
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
|
|
3,031
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | |||
|
|
3,109
In-stock
|
IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
|
|
3,258
In-stock
|
IR / Infineon | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 36mOhms | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 36 mOhms | 7.3 nC | Enhancement | |||||
|
|
2,956
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||
|
|
4,713
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | ||||
|
|
3,823
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | |||||
|
|
3,580
In-stock
|
IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
|
|
4,084
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement |
