- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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481
In-stock
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Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||||
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799
In-stock
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Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | |||||
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800
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | |||||
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790
In-stock
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Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.00378 Ohms | 1.5 V | 230 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0016 Ohms | 1.5 V | 200 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 0.0011 Ohms | 1.5 V | 290 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement |