- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0034 Ohms (1)
- 0.005 Ohms (2)
- 0.0056 Ohms (1)
- 0.0064 Ohms (1)
- 0.007 Ohms (3)
- 0.0071 Ohms (1)
- 0.0072 Ohms (1)
- 0.0078 Ohms (1)
- 0.0081 Ohms (1)
- 0.009 Ohms (1)
- 0.013 Ohms (2)
- 0.0155 Ohms (2)
- 0.018 Ohms (1)
- 0.02 Ohms (2)
- 0.024 Ohms (1)
- 0.033 Ohms (1)
- 0.035 Ohms (2)
- 0.048 Ohms (1)
- 0.05 Ohms (1)
- 0.079 Ohms (1)
- 0.13 Ohms (2)
- 0.241 Ohms (1)
- 11 mOhms (1)
- 11.4 mOhms (1)
- 21 mOhms (1)
- 27.5 mOhms (1)
- 36 S (1)
- 7 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (1)
- 108 nC (2)
- 109 nC (1)
- 11.3 nC (1)
- 113 nC (1)
- 12 nC (1)
- 125 nC (1)
- 130 nC (1)
- 134 nC (1)
- 137 nC (2)
- 145 nC (1)
- 146 nC (1)
- 150 nC (1)
- 155 nC (2)
- 164 nC (2)
- 18 nC (1)
- 190 nC (1)
- 200 nC (1)
- 21 nC (1)
- 21.2 nC (1)
- 22 nC (1)
- 23.5 nC (1)
- 26 nC (1)
- 270 nC (1)
- 300 nC (1)
- 330 nC (1)
- 350 nC (1)
- 38 nC (1)
- 50 nC (1)
- 57 nC (1)
- 58 nC (1)
- 6.8 nC (1)
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,660
In-stock
|
Siliconix / Vishay | MOSFET 80V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 0.02 Ohms | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
17,310
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.2 A | 0.241 Ohms | - 2.5 V | 18 nC | Enhancement | TrenchFET | |||
|
|
3,938
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
|
2,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | ||||
|
|
795
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 0.0034 Ohms | - 2.5 V | 330 nC | Enhancement | TrenchFET | |||
|
|
5,973
In-stock
|
Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.9 A | 0.048 Ohms | - 2.5 V | 11.3 nC | Enhancement | ||||
|
|
1,385
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 0.018 Ohms | - 2.5 V | 26 nC | Enhancement | TrenchFET | |||
|
|
525
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
2,765
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | ||||
|
|
734
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 36 S | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
708
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 0.033 Ohms | - 2.5 V | 134 nC | Enhancement | TrenchFET | |||
|
|
800
In-stock
|
Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 93 A | 0.0155 Ohms | - 2.5 V | 350 nC | Enhancement | ||||
|
|
2,500
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 32 A | 27.5 mOhms | - 2.5 V | 150 nC | Enhancement | ||||
|
|
2,726
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.8 A | 0.13 Ohms | - 2.5 V | 12 nC | Enhancement | ||||
|
|
1,085
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 40 A | 0.024 Ohms | - 2.5 V | 57 nC | Enhancement | TrenchFET | |||
|
|
2,877
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | ||||
|
|
280
In-stock
|
Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 120 A | 0.0081 Ohms | - 2.5 V | 190 nC | Enhancement | ||||
|
|
2,700
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 0.035 Ohms | - 2.5 V | 21 nC | Enhancement | TrenchFET | |||
|
|
808
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 0.035 Ohms | - 2.5 V | 23.5 nC | Enhancement | TrenchFET | |||
|
|
14,982
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 0.13 Ohms | - 2.5 V | 6.8 nC | Enhancement | TrenchFET | |||
|
|
1,600
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.013 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 55 A | 11 mOhms | - 2.5 V | 130 nC | Enhancement | ||||
|
|
GET PRICE |
5,000
In-stock
|
Siliconix / Vishay | MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB | 20 V | Through Hole | TO-220AB | - 55 C | + 175 C | Tube | 1 Channel | P-Channel | - 100 V | - 120 A | 11.4 mOhms | - 2.5 V | 125 nC | |||||
|
|
VIEW | Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 0.0072 Ohms | - 2.5 V | 300 nC | Enhancement | ||||
|
|
VIEW | Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 75 A | 0.0064 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
|
1,169
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 146 nC | Enhancement | TrenchFET | |||
|
|
VIEW | Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 0.009 Ohms | - 2.5 V | 50 nC | Enhancement | TrenchFET | |||
|
|
VIEW | Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 16 A | 0.05 Ohms | - 2.5 V | 38 nC | Enhancement |
