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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 30V 11A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 32nC @ 4.5V 2530pF @ 15V 2.8V, 10V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4085 N-Channel - 30V 11A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 32nC @ 4.5V 2530pF @ 15V 2.8V, 10V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 30V 11A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 32nC @ 4.5V 2530pF @ 15V 2.8V, 10V ±12V 2.5W (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel - 30V 11A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 32nC @ 4.5V 2530pF @ 15V 2.8V, 10V ±12V 2.5W (Ta)
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