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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 63A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 450 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V - - 140W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A D2PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 400 N-Channel - 40V 56A (Tc) 4.9 mOhm @ 56A, 10V 2.5V @ 100µA 53nC @ 4.5V 3617pF @ 25V 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET N-CH 60V 99A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 3000 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 450 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 63A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 450 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 40V 26A 8PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 26A (Ta), 85A (Tc) 3.3 mOhm @ 50A, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.6W (Ta), 104W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 525 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 60V 50A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK 0 3000 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET N-CH 100V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 6000 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D-PAK 0 6000 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 60V 50A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 3000 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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300
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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205
In-stock
Infineon Technologies MOSFET N-CH 60V 50A D-PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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925
In-stock
Infineon Technologies MOSFET N-CH 100V 42A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active IPAK (TO-251) 0 1 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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4,000
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Infineon Technologies MOSFET N-CH 40V 26A 8PQFN 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 40V 26A (Ta), 85A (Tc) 3.3 mOhm @ 50A, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.6W (Ta), 104W (Tc)
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2,000
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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10,000
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Infineon Technologies MOSFET N-CH 100V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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24,000
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Infineon Technologies MOSFET N-CH 60V 50A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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