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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 3000 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 400 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1000 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 100V 73A (Tc) 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V 3550pF @ 50V 10V ±20V 190W (Tc)
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