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Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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RFQ
Infineon Technologies MOSFET 2N-CH 30V 6.5A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 4085 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 6.9A 29 mOhm @ 6.9A, 10V 3V @ 250µA 33nC @ 10V 755pF @ 25V
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RFQ
Infineon Technologies MOSFET 2N-CH 30V 5.3A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 570 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 5.3A 50 mOhm @ 2.7A, 10V 3V @ 100µA 21nC @ 10V 515pF @ 25V
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RFQ
Infineon Technologies MOSFET 2N-CH 30V 5.3A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 4000 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 5.3A 50 mOhm @ 2.7A, 10V 3V @ 100µA 21nC @ 10V 515pF @ 25V
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Per Unit
$0.842
VIEW
RFQ
Infineon Technologies MOSFET 2N-CH 30V 6.5A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 175°C (TJ) Active 8-SO 0 4000 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 6.9A 29 mOhm @ 6.9A, 10V 3V @ 250µA 33nC @ 10V 755pF @ 25V
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