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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
48,000
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onsemi MOSFET N-CH 600V 0.2A SOT-223-4 TO-261-4, TO-261AA QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223-4 0 4000 N-Channel - 600V 200mA (Tc) 11.5 Ohm @ 100mA, 10V 4V @ 250µA 6.2nC @ 10V 170pF @ 25V 10V ±30V 2.1W (Tc)
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RFQ
48,000
In-stock
onsemi MOSFET P-CH 200V 0.67A SOT-223 TO-261-4, TO-261AA QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223-4 0 4000 P-Channel - 200V 670mA (Tc) 2.7 Ohm @ 335mA, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V 2.5W (Tc)
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RFQ
8,000
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onsemi MOSFET P-CH 100V 1A SOT-223 TO-261-4, TO-261AA QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223-4 0 4000 P-Channel - 100V 1A (Tc) 1.05 Ohm @ 500mA, 10V 4V @ 250µA 8.2nC @ 10V 250pF @ 25V 10V ±30V 2W (Tc)
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