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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.630
RFQ
980
In-stock
STMicroelectronics MOSFET N-CH 500V 12A TO-220 TO-220-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 100µA 27nC @ 10V 816pF @ 50V 10V ±25V 90W (Tc)
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Per Unit
$3.510
RFQ
274
In-stock
STMicroelectronics MOSFET N-CH 500V 12A TO220FP TO-220-3 Full Pack MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 100µA 27nC @ 10V 816pF @ 50V 10V ±25V 25W (Tc)
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