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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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1,500
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STMicroelectronics MOSFET N-CH 650V 15A I2PAK-FP TO-262-3 Full Pack, I²Pak MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 15A (Tc) 270 mOhm @ 7.5A, 10V 4V @ 250µA 44nC @ 10V 1280pF @ 50V 10V ±25V 30W (Tc)
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1,332
In-stock
STMicroelectronics MOSFET N-CH 600V 17A I2PAK FP TO-262-3 Full Pack, I²Pak MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 17A (Tc) 190 mOhm @ 8A, 10V 4V @ 250µA 46nC @ 10V 1400pF @ 50V 10V ±30V 30W (Tc)
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RFQ
350
In-stock
STMicroelectronics MOSFET N-CH 650V I2PAK-FP TO-262-3 Full Pack, I²Pak MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 33.3nC @ 10V 983pF @ 50V 10V ±25V 30W (Tc)
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