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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.090
RFQ
985
In-stock
STMicroelectronics MOSFET N-CH 650V 5A TO-220AB TO-220-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 650V 5A (Tc) 1.15 Ohm @ 2.5A, 10V 4V @ 250µA 9nC @ 10V 270pF @ 100V 10V ±25V 60W (Tc)
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Per Unit
$1.980
RFQ
989
In-stock
STMicroelectronics MOSFET N-CH 650V 4A TO-220AB TO-220-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 650V 4A (Tc) 1.35 Ohm @ 2A, 10V 4V @ 250µA 9.8nC @ 10V 226pF @ 100V 10V ±25V 60W (Tc)
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Per Unit
$1.840
RFQ
1,030
In-stock
STMicroelectronics MOSFET N-CH 650V 5A TO-220AB TO-220-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220 0 1 N-Channel - 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V 60W (Tc)
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