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Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 1500V 4A TO-247 TO-247-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-3 0 1 N-Channel - 1500V 4A (Tc) 7 Ohm @ 2A, 10V 5V @ 250µA 50nC @ 10V 1300pF @ 25V 10V ±30V 160W (Tc)
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STMicroelectronics MOSFET N-CH 1500V 4A TO-220 TO-220-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220AB 0 1 N-Channel - 1500V 4A (Tc) 7 Ohm @ 2A, 10V 5V @ 250µA 50nC @ 10V 1300pF @ 25V 10V ±30V 160W (Tc)
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STMicroelectronics MOSFET N-CH 1500V 4A TO3PF ISOWATT218FX PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active ISOWATT-218FX 0 1 N-Channel - 1500V 4A (Tc) 7 Ohm @ 2A, 10V 5V @ 250µA 50nC @ 10V 1300pF @ 25V 10V ±30V 63W (Tc)
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