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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 75V 195A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 0 1 N-Channel - 75V 195A (Tc) 2.6 mOhm @ 100A, 10V 3.7V @ 250µA 407nC @ 10V 13660pF @ 25V 6V, 10V ±20V 375W (Tc)
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Infineon Technologies MOSFET N-CH 75V 195A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 75V 195A (Tc) 2.6 mOhm @ 100A, 10V 3.7V @ 250µA 407nC @ 10V 13660pF @ 25V 6V, 10V ±20V 375W (Tc)
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Infineon Technologies MOSFET N-CH 75V 195A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D²PAK (TO-263AB) 0 1 N-Channel - 75V 195A (Tc) 2.6 mOhm @ 100A, 10V 3.7V @ 250µA 407nC @ 10V 13660pF @ 25V 6V, 10V ±20V 375W (Tc)
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