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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
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2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
FCP22N60N
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RFQ
81,000
In-stock
onsemi MOSFET N-CH 600V 22A TO-220 TO-220-3 SupreMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220-3 0 1 N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V 205W (Tc)
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RFQ
2,500
In-stock
onsemi MOSFET N-CH 600V 9A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 SupreMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 0 2500 N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 5V @ 250µA 17.8nC @ 10V 1000pF @ 100V 10V ±30V 92.6W (Tc)
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