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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
24N60M2
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86,000
In-stock
STMicroelectronics MOSFET N-CH 600V 18A TO220FP TO-220-3 Full Pack MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V 30W (Tc)
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500
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK-FP TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V 30W (Tc)
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RFQ
494
In-stock
STMicroelectronics MOSFET N CH 600V 18A TO281 TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V 30W (Tc)
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RFQ
1,000
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STMicroelectronics MOSFET N-CH 600V 24A TO220FP TO-220-3 Full Pack MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 600V 24A (Tc) 150 mOhm @ 12A, 10V 4V @ 250µA 37nC @ 10V 1370pF @ 100V 10V ±25V 30W (Tc)
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