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Supplier Device Package :
Minimum Quantity :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
F18N60M2
10+
$1.500
100+
$1.200
RFQ
86,220
In-stock
STMicroelectronics MOSFET N-CH 600V TO-220FP TO-220-3 Full Pack MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1000 N-Channel - 600V 13A (Tc) 280 mOhm @ 6.5A, 10V 4V @ 250µA 21.5nC @ 10V 791pF @ 100V 10V ±25V 25W (Tc)
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Per Unit
$2.930
RFQ
102
In-stock
STMicroelectronics MOSFET N-CH 600V TO-220 TO-220-3 MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 600V 13A (Tc) 280 mOhm @ 6.5A, 10V 4V @ 250µA 21.5nC @ 10V 791pF @ 100V 10V ±25V 110W (Tc)
Default Photo
Per Unit
$4.750
RFQ
512
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-247 TO-247-3 MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 13A (Tc) 280 mOhm @ 6.5A, 10V 4V @ 250µA 21.5nC @ 10V 791pF @ 100V 10V ±25V 110W (Tc)
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