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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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177
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STMicroelectronics MOSFET N-CH 600V 34A I2PAKFP TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 34A (Tc) 88 mOhm @ 17A, 10V 4V @ 250µA 57nC @ 10V 2500pF @ 100V 10V ±25V 40W (Tc)
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500
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK-FP TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V 30W (Tc)
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454
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STMicroelectronics MOSFET N-CH 600V I2PAK-FP TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 580pF @ 100V 10V ±25V 25W (Tc)
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494
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STMicroelectronics MOSFET N CH 600V 18A TO281 TO-262-3 Full Pack, I²Pak MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V 30W (Tc)
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