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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 500V 53A ISOTOP ISOTOP PowerMESH™ II Tube MOSFET (Metal Oxide) Chassis Mount 150°C (TJ) Active ISOTOP® 0 1 N-Channel - 500V 53A (Tc) 80 mOhm @ 27A, 10V 4V @ 250µA 434nC @ 10V 11200pF @ 25V 10V ±30V 460W (Tc)
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STMicroelectronics MOSFET N-CH 600V 40A ISOTOP ISOTOP PowerMESH™ II Tube MOSFET (Metal Oxide) Chassis Mount 150°C (TJ) Active ISOTOP® 0 1 N-Channel - 600V 40A (Tc) 130 mOhm @ 20A, 10V 4V @ 250µA 430nC @ 10V 11100pF @ 25V 10V ±30V 460W (Tc)
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