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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 75V 120A TO220 TO-220-3 OptiMOS™ 3 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3 0 0 N-Channel - 75V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V 14400pF @ 37.5V 10V ±20V 300W (Tc)
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RFQ
3,000
In-stock
Infineon Technologies MOSFET N-CH 200 D2PAK-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ 3 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO263-3 0 1000 N-Channel - 200V 88A (Tc) 11 mOhm @ 88A, 10V 4.2V @ 260µA 76nC @ 10V 650pF @ 100V 10V ±20V 250W (Tc)
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