Build a global manufacturer and supplier trusted trading platform.
Packaging :
Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
STMicroelectronics MOSFET N-CHANNEL 950V 38A TO247 TO-247-3 MDmesh™ DK5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C Active TO-247 Long Leads 0 1 N-Channel 950V 38A (Tc) 130 mOhm @ 19A, 10V 5V @ 100µA 100nC @ 10V 3480pF @ 100V 10V ±30V 450W (Tc)
Default Photo
VIEW
RFQ
STMicroelectronics MOSFET N-CHANNEL 950V 38A TO247 TO-247-3 MDmesh™ DK5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C Active TO-247 0 1 N-Channel 950V 38A (Tc) 130 mOhm @ 19A, 10V 5V @ 100µA 100nC @ 10V 3480pF @ 100V 10V ±30V 450W (Tc)
Default Photo
GET PRICE
RFQ
94
In-stock
STMicroelectronics TO 247 TO-247-3 MDmesh™ DK5 - MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel 950V 18A (Tc) 330 mOhm @ 9A, 10V 5V @ 100µA 50.7nC @ 10V 1600pF @ 100V 10V ±30V 250W (Tc)
Page 1 / 1