- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,279
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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14,280
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 190 mOhms | 4 V | 29 nC | ||||||
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25,820
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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1,713
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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1,435
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 188 mOhms | 2 V | 29 nC | Enhancement | |||||
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1,286
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | ||||||
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1,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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855
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 230 mOhms | 3 V | 29 nC | Enhancement | ||||
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1,323
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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720
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | Enhancement | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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415
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 200 mOhms | 4 V | 29 nC | |||||
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68
In-stock
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IXYS | MOSFET 12 Amps 500V 0.5 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar | |||
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308
In-stock
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Toshiba | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 14 Ohms | 29 nC | |||||||||
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852
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 175 mOhms | 3 V | 29 nC | Enhancement | |||||
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1,517
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 6mOhm HEXFET 110A ID | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 3 V | 29 nC |
