- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
122
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||
|
|
GET PRICE |
249
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||
|
|
GET PRICE |
248
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||
|
|
GET PRICE |
32
In-stock
|
IXYS | MOSFET P-Channel: Standard MOSFET | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP |
