- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, NPN | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel, NPN | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS |
