- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | onsemi | MOSFET 2P-CH 30V 8A 8SOP | 8-SOIC (0.173", 4.40mm Width) | - | Tape & Reel (TR) | Surface Mount | 150°C (TJ) | Obsolete | 8-SOP | 0 | 1000 | 2 P-Channel (Dual) | 2.5W | Logic Level Gate | 30V | 8A | 26 mOhm @ 8A, 10V | - | 18nC @ 10V | 900pF @ 10V | |||
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VIEW | onsemi | MOSFET 2N-CH 30V 5.5A 8-SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 30V | 5.5A | 30 mOhm @ 5.5A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 900pF @ 10V | |||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A/12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | |||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | |||
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VIEW | onsemi | MOSFET N/P-CH 30V/20V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 32500 | 2500 | N and P-Channel | 900mW | Logic Level Gate | 30V, 20V | 5.5A, 4A | 30 mOhm @ 5.5A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 900pF @ 10V | |||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A/12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 9.3 mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V |
