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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 60V 21A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 N-Channel - 60V 21A (Tc) 42 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V 37W (Tc)
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Per Unit
$1.730
RFQ
982
In-stock
Texas instruments MOSFET N-CH 60V 100A TO220-3 TO-220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 60V 72A (Ta), 100A (Tc) 6.3 mOhm @ 75A, 10V 2.3V @ 250µA 34nC @ 10V 3025pF @ 30V 4.5V, 10V ±20V 192W (Tc)
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