- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-7 | 0 | 1000 | N-Channel | - | 60V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 10V | ±20V | 167W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 84A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 84A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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16
In-stock
|
Infineon Technologies | MOSFET N CH 60V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | 160W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 120A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | 160W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 60V 90A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 90A | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 60V | 100A (Tc) | 3.1 mOhm @ 50A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 10V | ±20V | 2.5W (Ta), 139W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 60V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 800 | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | 160W (Tc) | ||||
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1,911
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK (TO-252AA) | 0 | 1 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||||
|
22,400
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 84A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
|
3,000
In-stock
|
Infineon Technologies | MOSFET N CH 60V 110A TO-220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | 160W (Tc) | ||||
|
4,320
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 84A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
|
10,000
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 60V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 10V | ±20V | 167W (Tc) |