- Manufacture :
- Package / Case :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 18.5A 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 60V | 18.5A (Tc) | 17 mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | 11.5W (Tc) | ||||
|
2,149
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 30A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 30A (Tc) | 40 mOhm @ 15A, 10V | 2.5V @ 250µA | 17nC @ 5V | 660pF @ 25V | 5V, 10V | ±18V | 70W (Tc) |